Carrier recombination properties in low-temperature-grown and ion-implanted GaAs
نویسندگان
چکیده
منابع مشابه
Subband gap carrier dynamics in low-temperature-grown GaAs
Measurements of the carrier relaxation dynamics in low-temperature-grown GaAs have been made with a femtosecond-resolution, time-resolved pump-probe technique using a subband-gap probe-beam wavelength. The transient absorption and index of refraction changes have been analyzed using a relaxation model with up to four different excited state populations. The carrier recombination time within the...
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ژورنال
عنوان ژورنال: Lithuanian Journal of Physics
سال: 2005
ISSN: 1648-8504
DOI: 10.3952/lithjphys.45404